gallium arsenide造句
造句与例句手机版
- Test method for ga as ratio of surface of gallium arsenide
砷化镓表面镓砷比的测试方法 - Boat - grown gallium arsenide single crystals and as - cut slices
水平法砷化镓单晶及切割片 - Test method for thermal stability testing of gallium arsenide wafers
砷化镓晶片热稳定性的试验方法 - Gallium arsenide single crystal - determination of dislocation density
砷化镓单晶位错密度的测量方法 - Gallium arsenide injection laser
砷化镓注入雷射 - Meaning you could take a simple aluminum gallium arsenide laser and -
也就是说,只要拿一个简单的砷化铝镓激光器和 - Aluminium gallium arsenide , algaas
砷化镓铝 - Meaning you could take a simple aluminum gallium arsenide laser and - -
也就是说,只要拿一个简单的砷化铝镓激光器和. . - Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
砷化镓外延层厚度红外干涉测量方法 - Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices
液封直拉法砷化镓单晶及切割片 - It's difficult to see gallium arsenide in a sentence. 用gallium arsenide造句挺难的
- Test method for microzone homogeneity of semi - insulating monocrystal gallium arsenide
半绝缘砷化镓单晶微区均匀性测试方法 - Gallium arsenide photphide
磷砷化镓 - Determination of carrier concentration in gallium arsenide by the plasma resonance minimum
砷化镓中载流子浓度等离子共振测量方法 - Quantitative determination of ab microscopic defect density in gallium arsenide single crystal
砷化镓单晶ab微缺险密度定量检验方法 - Test method for residual impurities concentration in microzone of semi - insulating gallium arsenide
半绝缘砷化镓剩余杂质浓度微区试验方法 - Gallium arsenide epitaxial layer - determination of carrier concentration - voltage - capacitance method
砷化镓外延层载流子浓度电容-电压测量方法 - Test method for sub - surface damege of gallium arsenide polished wafer by x - ray double crystal diffraction
砷化镓抛光片亚损伤层的x射线双晶衍射试验方法 - Test method for crystallographic perfection of gallium arsenide by molten potassium hydroxide etch technique
用熔融氢氧化钾腐蚀技术测试砷化镓结晶完整性的试验方法 - Test method for carbon concentration of semi - insulating monocrystal gallium arsenide by measurement infrared absorption method
半绝缘砷化镓单晶中碳浓度的红外吸收测试方法 - Test method for wavelength of peak photoluminescence and the corresponding composition of gallium arsenide phosphide wafers
磷化砷化镓片的最大光致发光波长及其相应成分的试验方法
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